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MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CM400HG-66H
q IC ................................................................... 400A q VCES ....................................................... 3300V q High Insulated Type q 1-element in a Pack q AISiC Baseplate
APPLICATION Traction drives, High Reliability Converters / Inverters, DC choppers
OUTLINE DRAWING & CIRCUIT DIAGRAM
730.5 570.25 2 - M8 NUTS Dimensions in mm
29.7
2
170.1
(2) C
1240.25
1400.5
440.3
1
(1) E E
G C
36
EG C
CIRCUIT DIAGRAM
5 21.60.3 12.90.3
4 - 7 MOUNTING HOLES
16.20.3
screwing depth min. 4
screwing depth min. 16.5
410.5 220.3
17.40.3 2.8 TAB # 110, T = 0.5
5.8
48 +1.0 0
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
50.15
40.40.5
LABEL
36.2
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
MAXIMUM RATINGS
Symbol VCES VGES IC ICM IE (Note 2) IEM(Note 2) PC (Note 3) Tj Top Tstg Viso Qpd tpsc Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum power dissipation Junction temperature Operating temperature Storage temperature Isolation voltage Partial discharge Maximum short circuit pulse width VGE = 0V, Tj = 25C VCE = 0V, Tj = 25C TC = 90C Pulse Pulse TC = 25C, IGBT part Conditions Ratings 3300 20 400 800 400 800 4100 -40 ~ +150 -40 ~ +125 -40 ~ +125 10200 10 10 Unit V V A A A A W C C C V pC s
(Note 1) (Note 1)
RMS, sinusoidal, f = 60Hz, t = 1min. V1 = 6900Vrms, V2 = 5100Vrms f = 60Hz (acc. to IEC 1287) VCC = 2200V, VCES 3300V, VGE = 15V Tj = 125C
ELECTRICAL CHARACTERISTICS
Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres Qg Item Collector cut-off current Gate-emitter threshold voltage Gate leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Conditions VCE = VCES, VGE = 0V, Tj = 25C IC = 40mA, VCE = 10V, Tj = 25C VGE = VGES, VCE = 0V, Tj = 25C IC = 400A, VGE = 15V, Tj = 25C IC = 400A, VGE = 15V, Tj = 125C VCE = 10V, f = 100kHz VGE = 0V, Tj = 25C VCC = 1650V, IC = 400A, VGE = 15V, Tj = 25C IE = 400A, VGE = 0V, Tj = 25C (Note 4) IE = 400A, VGE = 0V, Tj = 125C (Note 4) VCC = 1650V, IC = 400A, VGE = 15V RG(on) = 5, Tj = 125C, Ls = 100nH Inductive load VCC = 1650V, IC = 400A, VGE = 15V RG(off) = 5, Tj = 125C, Ls = 100nH Inductive load VCC = 1650V, IC = 400A, VGE = 15V RG(on) = 5, Tj = 125C, Ls = 100nH Inductive load Min -- 5.0 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6.0 -- 3.30 3.60 60 6.0 5.4 2.8 2.80 2.70 -- -- 0.64 -- -- 0.52 -- 270 0.30 Max 5 7.0 0.5 4.20 -- -- -- -- -- 3.60 -- 1.60 1.00 -- 2.50 1.00 -- 1.40 -- -- Unit mA V A V nF nF nF C V s s J/pulse s s J/pulse s C J/pulse
(Note 4) (Note 4)
VEC(Note 2) Emitter-collector voltage td(on) tr Eon td(off) tf Eoff trr (Note 2) Qrr (Note 2) Erec (Note 2)
Note 1. 2. 3. 4.
Turn-on delay time Turn-on rise time Turn-on switching energy Turn-off delay time Turn-off fall time Turn-off switching energy Reverse recovery time Reverse recovery charge Reverse recovery energy
Pulse width and repetition rate should be such that junction temperature (Tj) does not exceed Topmax rating (125C). The symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi). Junction temperature (Tj) should not exceed Tjmax rating (150C). Pulse width and repetition rate should be such as to cause negligible temperature rise.
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
THERMAL CHARACTERISTICS
Symbol Rth(j-c)Q Rth(j-c)R Rth(c-f) Item Thermal resistance Contact thermal resistance Conditions Junction to Case, IGBT part Junction to Case, FWDi part Case to Fin, grease = 1W/m*K Min -- -- -- Limits Typ -- -- 18.0 Max 30.0 60.0 -- Unit K/kW K/kW K/kW
MECHANICAL CHARACTERISTICS
Symbol Item Conditions M8 : Main terminals screw M6 : Mounting screw M4 : Auxiliary terminals screw Min 7.0 3.0 1.0 -- 600 26.0 56.0 Limits Typ -- -- -- 0.52 -- -- -- Max 15.0 6.0 3.0 -- -- -- -- Unit
M -- CTI da ds
Mounting torque Mass Comparative tracking index Clearance distance in air Creepage distance along surface
N*m kg -- mm mm
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
PERFORMANCE CURVES
OUTPUT CHARACTERISTICS (TYPICAL) 800 Tj = 125C 700 700 800
TRANSFER CHARACTERISTICS (TYPICAL) VCE = 20V
COLLECTOR CURRENT (A)
VGE = 15V 500 400
VGE = 12V
COLLECTOR CURRENT (A)
600
VGE = 20V
600 500 400 300 200 100 0
VGE = 10V 300 200 VGE = 8V 100 0
Tj = 25C Tj = 125C 0 2 4 6 8 10 12
0
1
2
3
4
5
6
COLLECTOR-EMITTER VOLTAGE (V)
GATE-EMITTER VOLTAGE (V)
COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL)
FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 6
COLLECTOR-EMITTER SATURATION VOLTAGE (V)
6 VGE = 15V 5
EMITTER-COLLECTOR VOLTAGE (V)
5
4
4
3
3
2
2
1 Tj = 25C Tj = 125C 0 0 200 400 600 800
1 Tj = 25C Tj = 125C 0 0 200 400 600 800
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
CAPACITANCE CHARACTERISTICS (TYPICAL) 103
7 5 3 2
GATE CHARGE CHARACTERISTICS (TYPICAL) 20 VCC = 1650V, IC = 400A Tj = 25C
VGE = 0V, Tj = 25C f = 100kHz 16
CAPACITANCE (nF)
102
7 5 3 2
Cies
GATE-EMITTER VOLTAGE (V)
12
8
101
7 5 3 2
Coes
4
Cres 100 -1 10
23 5 7 100 23 5 7 101 23 5 7 102
0
0
1
2 GATE CHARGE (C)
3
4
COLLECTOR-EMITTER VOLTAGE (V)
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) 1.4 VCC = 1650V, VGE = 15V RG(on) = RG(off) = 5 Tj = 125C, Inductive load Eon 1 Eoff 0.8 3
HALF-BRIDGE SWITCHING ENERGY CHARACTERISTICS (TYPICAL) VCC = 1650V, IC = 400A VGE = 15V Tj = 125C, Inductive load Eon 2
1.2
2.5
SWITCHING ENERGIES (J/pulse)
SWITCHING ENERGIES (J/pulse)
1.5
0.6 Erec
1 Eoff 0.5 Erec
0.4
0.2
0
0
200
400
600
800
0
0
10
20
30
40
50
COLLECTOR CURRENT (A)
GATE RESISTANCE ()
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 102
7 5 3 2
FREE-WHEEL DIODE REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 102
7 5
REVERSE RECOVERY TIME (s)
3 2
3 2
101
7 5 3 2
101
7 5 3 2
103 lrr
7 5 3 2
td(off)
100
7 5 3 2
td(on)
100
7 5 3 2
trr
102
7 5 3 2
tr tf
10-1 1 10
23
5 7 102
23
5 7 103
23
5 7 104
10-1 1 10
23
5 7 102
23
5 7 103
23
5 7 104
101
COLLECTOR CURRENT (A)
EMITTER CURRENT (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS
NORMALIZED TRANSIENT THERMAL IMPEDANCE
1.2 Single Pulse, TC = 25C Rth(j-c)Q = 30K/kW Rth(j-c)R = 60K/kW
1.0
0.8
0.6
0.4
0.2
0 -3 10 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 2 3 5 7 101 TIME (s)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005
REVERSE RECOVERY CURRENT (A)
VCC = 1650V, VGE = 15V RG(on) = RG(off) = 5 Tj = 125C, Inductive load
VCC = 1650V, VGE = 15V RG(on) = RG(off) = 5 Tj = 125C, Inductive load
104
7 5
SWITCHING TIMES (s)
MITSUBISHI HVIGBT MODULES
CM400HG-66H
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE
REVERSE BIAS SAFE OPERATING AREA (RBSOA) 1200 VCC 2200V, VGE = +/-15V Tj = 125C, RG(off) 5 1200
FREE-WHEEL DIODE REVERSE RECOVERY SAFE OPERATING AREA (RRSOA) VCC 2200V, di/dt 2200A/s Tj = 125C
1000
REVERSE RECOVERY CURRENT (A)
0 1000 2000 3000 4000
1000
COLLECTOR CURRENT (A)
800
800
600
600
400
400
200
200
0
0
0
1000
2000
3000
4000
COLLECTOR-EMITTER VOLTAGE (V)
EMITTER-COLLECTOR VOLTAGE (V)
HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
Jul. 2005

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